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The etching of ZnO thin films using acetylacetone (Hacac) doses with long exposure times, followed by purging and subsequent exposure to O2 plasma, is studied in a hot-wall reactor using simultaneous in situ spectroscopic ellipsometry and quadrupole mass spectrometry. The static exposure step results in the efficient consumption of Hacac. For each etch cycle, the O2 plasma plays a crucial role in removing unreacted Hacac from the ZnO surface, priming the surface for subsequent Hacac etching. This is confirmed by the production of CO2 during the O2 plasma pulse. The temperature window for etching is established as 220–280 °C with a maximum etch per cycle (EPC) of 0.15 nm/cy. Under these conditions, the Hacac pulse is 2 s long with a 30 s static hold step followed by 5 s O2 plasma step at 300 W power. Statistical analyses of etch data at the granularity level of each cycle reveal the importance of the static hold step in determining EPC. Arrhenius behavior of etching during the hold step reveals a piecewise linear trend with a low temperature (120–200 °C) activation energy (Ea) of 202 meV and a high temperature (200–320 °C) Ea of 32 meV. It is shown that saturation behavior in EPC is pulse time and static hold time dependent. Shorter Hacac pulses (≤1 s) demonstrate saturation behavior for static hold times ∼30 s, longer pulses of Hacac (≥2 s) show no saturation in EPC with static hold times up to 75 s. 

Abstract In this study, the structure and transport properties of two polymorphs, nanoparticles and nanorods, of the iron(II) triazole [Fe(Htrz)₂(trz)](BF₄) spin crossover complex were compared. Conductive atomic force microscopy was used to map the electrical conductivity of individual nanoparticles and nanorods. The [Fe(Htrz)₂(trz)](BF₄) nanorods showed significantly higher conductivity compared to nanoparticles. This difference in electrical conductivity is partially associated to the different Fe–N bond lengths in each of the polymorphs, with an inverse relationship between Fe–N bond length and conductivity. Transport measurements were done on the nanorods for both high spin (at 380 K) and low spin (at 320 K) states under dark and illuminated conditions. The conductance is highest for the low spin state under dark conditions. In illumination, the conductance change is much diminished. 

Phase change materials (PCMs) are important building blocks in solid-state memory and photonic devices. Solution-based processing promises large-area, cost-effective, conformal coating of optical PCMs (O-PCMs) for photonic applications. In this work, a solution processing route was developed for Ge₂Sb₂Se₄Te₁(GSST), a target PCM of interest due to its large optical contrast, broadband transparency, and improved glass-forming capability. An alkahest solvent mixture of ethanedithiol and ethylenediamine was used as a solvent system to fabricate solution-derived GSST thin films and films from these solutions were prepared and characterized using SEM, XRD, and Raman spectroscopy.